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Global Gallium Nitride Device Market Insight January 27, 2022 Comments

Global Gallium Nitride Device is forecast to substantial increase over the next five years. According to the World Knowledge Information (WKI) “Global Gallium Nitride Device Professional Survey Report 2020, Forecast to 2025”, With the rapid improvement of technology. The compound annual growth rate (CAGR) for the 2020-2026 period is projected to be 26.55% base on WKI regression analysis model.
Analysts’ Viewpoint
The key factors contributing to the growth of the GaN power device includes the vast addressable market for GaN in the consumer electronics and automotive verticals, wide bandgap property of GaN material encouraging innovative applications, success of GaN in RF power electronics, and increasing adoption of GaN RF power device in the military, defense, and aerospace vertical.
Gallium nitride is more efficient, more thermally stable, and certainly more capable for use in power devices that demand more load or higher frequencies at higher temperatures. Gallium nitride is a future-proofed material for the semiconductor world and will lead to more readily available small, high-frequency products.
Market insight:
Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising characteristics for THz devices.Due to high power density and voltage breakdown limits GaN is also emerging as a promising candidate for 5G cellular base station applications.
Fortunately, the cost to produce a GaN device is inherently lower than the cost to produce a MOSFET device, since GaN devices are produced using standard silicon manufacturing procedures in the same factories that currently produce traditional silicon semiconductors, and the resulting devices are much smaller for the same functional performance. Since the individual devices are much smaller than silicon devices, many more GaN devices can be produced per wafer, thus forming a situation where GaN devices always cost less to manufacture than their silicon counterparts. As GaN technology improves, the cost gap gets even wider.
Competition Landscape:
Some of the leading players will include in our report: Infineon,Cree GAN,Panasonic,GaN Systems,Analog Devices,TSMC.
Infineon Technologies and Panasonic Corporation have announced an agreement under which both companies will jointly develop Gallium nitride (GaN) devices based on Panasonic’s normally-off (enhancement mode) GaN on silicon transistor structure integrated into Infineon’s surface-mounted device (SMD) packages. In this context Panasonic has provided Infineon with a license of its normally-off GaN transistor structure.
STMicroelectronics has signed an agreement to acquire a majority stake GaN-on-Si technology start-up Exagan (founded in 2014 with support from CEA-Leti and Soitec). Exagan’s expertise in epitaxy, product development and application know-how will broaden and accelerate ST’s power GaN roadmap and business for automotive, industrial and consumer applications.
Segmentation of Gallium Nitride Device Market:
According to the type, the market for GaN is divided into depletion mode,enhancement mode and others.The depletion mode transistor is normally on and is turned off with a negative voltage relative to the drain and source electrodes. In contrast, the enhancement mode transistor is normally off and is turned on by positive voltage applied to the gate. Depletion mode transistors are inconvenient because at start-up of a power converter, a negative bias must first be applied to the power devices or a short circuit will result. Enhancement mode devices do not have this problem: with zero bias on the gate, an enhancement mode device is off and will not conduct current.
Gallium Nitride Device Market: Regional Analysis
In terms of geography, the global gallium nitride device market has been segmented into: North America, Asia Pacific, Europe, South America, and the Middle East and Africa.
North America is a prominent region in gallium nitride semiconductor devices market. The U.S. is a leading market owing to the rapid development in the aerospace and rising demand for semiconductor devices in military, offshore oil & gas exploration, and emergency medical service providers over the forecast period. Asia Pacific region is expected to have substantial growth in the gallium nitride semiconductor devices market. China, Taiwan, Republic of Korea, and Japan are the market leaders in the gallium nitride semiconductor devices. Europe is also anticipated to have a significant growth rate over the forecast period.
Cagr: 26.55
Largest share area:North America
Largest share country:America